DMP2004DWK
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
-50
-25 0 25 50 75 100 125 150
T A , AMBIENT TEMPERATURE (°C)
Fig. 3 Gate Threshold Voltage vs.
Ambient Temperature
0.01 0.1 1
-I D , DRAIN-SOURCE CURRENT (A)
Fig. 4 Static Drain-Source On-Resistance vs.
Drain Current
10
10
-I D , DRAIN-SOURCE CURRENT (A)
Fig. 5 Static Drain-Source On-Resistance vs. Drain Current
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
-I D , DRAIN-SOURCE CURRENT (A)
Fig. 6 Static Drain-Source On-Resistance vs.
Drain-Source Current vs. Gate Source Voltage
0.6
-50
-25 0 25 50 75 100 125
T A , AMBIENT TEMPERATURE (°C)
150
Fig. 7 Static Drain-Source On-State Resistance
vs. Ambient Temperature
DMP2004DWK
Document number: DS30940 Rev. 6 - 2
3 of 5
www.diodes.com
January 2014
? Diodes Incorporated
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相关代理商/技术参数
DMP2004K 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMP2004K-7 功能描述:MOSFET P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMP2004TK 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMP2004TK_09 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMP2004TK-7 功能描述:MOSFET P-Channel .15W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMP2004VK 制造商:Diodes Incorporated 功能描述:MOSFET PP CH 20V 0.53A SOT563 制造商:Diodes Incorporated 功能描述:MOSFET, PP CH, 20V, 0.53A, SOT563
DMP2004VK-7 功能描述:MOSFET Dual P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMP2004WK 制造商:Diodes Incorporated 功能描述:MOSFET P CH ESD 20V 0.4A SOT323 制造商:Diodes Incorporated 功能描述:MOSFET, P CH, ESD, 20V, 0.4A, SOT323 制造商:Diodes Incorporated 功能描述:MOSFET, P CH, ESD, 20V, 0.4A, SOT323; Transistor Polarity:P Channel; Continuous Drain Current Id:-400mA; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.7ohm; Rds(on) Test Voltage Vgs:-4.5V; Power Dissipation Pd:250mW ;RoHS Compliant: Yes